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Photoelectric conversion element and imaging device

專利號
US12178128B2
公開日期
2024-12-24
申請人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領(lǐng)域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

In the following, description is given of the configurations, materials, and the like of respective components.

The organic photoelectric converter 20 is an organic photoelectric conversion element that absorbs light corresponding to a wavelength band of a portion or the entirety of a selective wavelength band (for example, from 400 nm to 700 nm both inclusive) to generate electron-hole pairs.

The lower electrode 21 includes the readout electrode 21A and the accumulation electrode 21B that are separately formed as described above. The readout electrode 21A transfers electric charges generated in the photoelectric conversion layer 24 to the floating diffusion FD1, and is coupled to the floating diffusion FD1 via the second upper contact 29B, the pad section 39A, the first upper contact 29A, the through electrode 34, the coupling section 41A, and the second lower contact 46, for example. The accumulation electrode 21B accumulates, in the semiconductor layer 23, electrons as signal electric charges of the electric charges generated in the photoelectric conversion layer 24. The accumulation electrode 21B is directly opposed to light reception surfaces of the inorganic photoelectric converters 32G and 32R formed in the semiconductor substrate 30, and is provided in a region that covers these light reception surfaces. The accumulation electrode 21B is preferably larger than the readout electrode 21A, which makes it possible to accumulate many electric charges. A voltage application circuit 60 is coupled to the accumulation electrode 21B via wiring as illustrated in FIG. 4.

權(quán)利要求

1
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