Photoelectric conversion element and imaging device
摘要
說(shuō)明書(shū)
The lower electrode 21 includes an electrically conductive film having light transmissivity. Examples of a constituent material of the lower electrode 21 include ITO, In2O3 to which tin (Sn) is added as a dopant, and indium tin oxide including crystalline ITO and amorphous ITO. In addition to the materials described above, a tin oxide (SnO2)-based material to which a dopant is added or a zinc oxide-based material prepared by adding a dopant may be used as the constituent material of the lower electrode 21. Examples of the zinc oxide-based material include aluminum zinc oxide (AZO) to which aluminum (Al) is added as a dopant, gallium zinc oxide (GZO) to which gallium (Ga) is added, boron zinc oxide to which boron (B) is added, and indium zinc oxide (IZO) to which indium (In) is added. In addition, CuI, InSbO4, ZnMgO, CuInO2, MgIN2O4, CdO, ZnSnO3, TiO2, or the like may be used as the constituent material of the lower electrode 21. Further, a spinel oxide or an oxide having a YbFe2O4 structure may be used. It is to be noted that the lower electrode 21 formed by using the material as described above generally has a high work function, and functions as an anode electrode.
