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Photoelectric conversion element and imaging device

專利號
US12178128B2
公開日期
2024-12-24
申請人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

The inorganic photoelectric converters 32G and 32R each have a pn junction in a predetermined region of the semiconductor substrate 30. The inorganic photoelectric converters 32G and 32R enable dispersion of light in the longitudinal direction with use of a difference in wavelength of absorbed light depending on a depth of light incidence in the silicon substrate. The inorganic photoelectric converter 32G selectively detects green light to accumulate signal electric charges corresponding to green, and is disposed at a depth that allows for efficient photoelectric conversion of the green light. The inorganic photoelectric converter 32R selectively detects red light to accumulate signal electric charges corresponding to red, and is disposed at a depth that allows for efficient photoelectric conversion of the red light. It is to be noted that green (G) and red (R) are colors respectively corresponding to a wavelength band from 495 nm to 620 nm, for example, and a wavelength band from 620 nm to 750 nm, for example. It is sufficient if each of the inorganic photoelectric converters 32G and 32R is allowed to detect light in a portion or the entirety of a corresponding one of the wavelength bands.

權(quán)利要求

1
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