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Photoelectric conversion element and imaging device

專利號
US12178128B2
公開日期
2024-12-24
申請人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領(lǐng)域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

The transfer transistor Tr3 (a transfer transistor TR3trs) transfers, to the floating diffusion FD3, signal electric charges corresponding to red generated and accumulated in the inorganic photoelectric converter 32R, and includes, for example, a MOS transistor. In addition, the transfer transistor TR3trs is coupled to a transfer gate line TG3. Further, the floating diffusion FD3 is provided in a region 38C in proximity to the gate Gtrs3 of the transfer transistor TR3trs. Electric charges accumulated in the inorganic photoelectric converter 32R are read by the floating diffusion FD3 via a transfer channel formed along the gate Gtrs3.

A reset transistor TR2rst, an amplifier transistor TR2amp, and a selection transistor TR2sel that are included in a controller of the inorganic photoelectric converter 32G are further provided on the second surface (the surface 30S2) side of the semiconductor substrate 30. In addition, a reset transistor TR3rst, an amplifier transistor TR3amp, and a selection transistor TR3sel that are included in a controller of the inorganic photoelectric converter 32R are provided.

The reset transistor TR2rst includes a gate, a channel formation region, and source/drain regions. The gate of the reset transistor TR2rst is coupled to a reset line RST2, and one source drain region of the reset transistor TR2rst is coupled to the power source VDD. Another source/drain region of the reset transistor TR2rst also serves as the floating diffusion FD2.

權(quán)利要求

1
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