Subsequently, as illustrated in FIG. 8, the dielectric film 26 is formed on the first surface (the surface 30S1) of the semiconductor substrate 30 and the side surface of the through hole 30H with use of an atomic layer deposition (Atomic Layer Deposition; ALD) method, for example. Thus, the dielectric film 26 is continuously formed on the first surface (the surface 30S1) of the semiconductor substrate 30 and the side surface and a bottom surface of the through hole 30H. Next, the insulating film 27 is formed on the first surface (the surface 30S1) of the semiconductor substrate 30 and in the through hole30H, and thereafter the insulating film 27 and the dielectric film 26 formed on the bottom surface of the through hole 30H are removed by dry etching, for example, to expose the coupling section 41A. It is to be noted that at this time, the insulating film 27 on the first surface (the surface 30S1) is also thinned. Subsequently, an electrically conductive film is formed on the insulating film 27 and in the through hole 30H, and thereafter a photoresist PR is formed at a predetermined position on the electrically conductive film. Next, etching and removal of the photoresist PR are performed to form the through electrode 34 having an overhang portion on the first surface (the surface 30S1) of the semiconductor substrate 30.
