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Photoelectric conversion element and imaging device

專利號(hào)
US12178128B2
公開日期
2024-12-24
申請(qǐng)人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領(lǐng)域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

The organic photoelectric converter 70 is stacked above the organic photoelectric converter 20, for example, and has a configuration in which a lower electrode 71, a semiconductor layer 73, a photoelectric conversion layer 74, and an upper electrode 75 are stacked in this order from the first surface (the surface 30S1) side of the semiconductor substrate 30, similarly to the organic photoelectric converter 20. In addition, an insulating layer 72 is provided between the lower electrode 71 and the semiconductor layer 73. The lower electrode 71 is formed separately for each imaging element 10C, for example, and includes a readout electrode 71A and an accumulation electrode 71B that are separated from each other with the insulating layer 72 interposed therebetween as described in detail later. The readout electrode 71A of the lower electrode 71 is electrically coupled to the photoelectric conversion layer 74 via an opening 72H provided in the insulating layer 72. FIG. 12 illustrates an example in which the semiconductor layer 73, the photoelectric conversion layer 74, and the upper electrode 75 are formed separately for each imaging element 10C; however, the semiconductor layer 73, the photoelectric conversion layer 74, and the upper electrode 75 may be formed as common continuous layers for a plurality of imaging elements 10C, for example.

權(quán)利要求

1
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