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Photoelectric conversion element and imaging device

專利號
US12178128B2
公開日期
2024-12-24
申請人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領(lǐng)域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

As described above, the imaging element 10B according to the present embodiment has a configuration in which two organic photoelectric converters 20 and 70 and one inorganic photoelectric converter 32 are stacked, and similarly to the first embodiment described above, for example, the photoelectric conversion layer 24 included in the organic photoelectric converter 20 that acquires the blue (B) color signal is formed by using the benzothienobenzothiophene-based compound represented by the general formula (1) described above. This makes it possible to achieve effects similar to those in the first embodiment described above.

3. Third Embodiment

FIG. 13 schematically illustrates a cross-sectional configuration of an imaging element (an imaging element 10D) according to the third embodiment of the present disclosure. The imaging element 10D is included, for example, in one pixel (a unit pixel P) of an imaging device (the imaging device 1) such as a CMOS image sensor used for an electronic apparatus such as a digital still camera and a video camera. An organic photoelectric converter 80 according to the present embodiment differs from the first and second embodiments described above in that the organic photoelectric converter 80 has a configuration in which a lower electrode 81, the photoelectric conversion layer 24, and the upper electrode 25 are stacked in this order and the lower electrode 81 is formed as a solid film in a pixel.

權(quán)利要求

1
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