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Photoelectric conversion element and imaging device

專利號
US12178128B2
公開日期
2024-12-24
申請人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領(lǐng)域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

FIG. 15 is a block diagram illustrating a configuration of an imaging device using the imaging element illustrated in FIG. 1 and the like for a pixel.

FIG. 16 is a functional block diagram illustrating an electronic apparatus (camera) using the imaging device illustrated in FIG. 15.

FIG. 17 is a block diagram depicting an example of a schematic configuration of an in-vivo information acquisition system.

FIG. 18 is a view depicting an example of a schematic configuration of an endoscopic surgery system.

FIG. 19 is a block diagram depicting an example of a functional configuration of a camera head and a camera control unit (CCU).

FIG. 20 is a block diagram depicting an example of schematic configuration of a vehicle control system.

FIG. 21 is a diagram of assistance in explaining an example of installation positions of an outside-vehicle information detecting section and an imaging section.

MODES FOR CARRYING OUT THE INVENTION

權(quán)利要求

1
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