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Photoelectric conversion element and imaging device

專利號
US12178128B2
公開日期
2024-12-24
申請人
Sony Group Corporation(JP Tokyo)
發(fā)明人
Masato Kanno; Yosuke Saito
IPC分類
H10K85/60; H10K30/30; H10K39/32; H10K85/20
技術(shù)領(lǐng)域
electrode,conversion,layer,imaging,in,converter,organic,transistor,formula,image
地域: Tokyo

摘要

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).

說明書

In contrast to this, in a case where the through electrode 34 is not coupled to the floating diffusion FD3, it is difficult to reset the electric charges accumulated in the floating diffusion FD3, causing the electric charges to be drawn to the upper electrode 25 side by application of a large voltage. This may damage the photoelectric conversion layer 24. In addition, a configuration that enables resetting in a short period of time causes an increase in dark time noise, thereby resulting in a trade-off; therefore, this configuration is difficult.

(Acquisition of Green Signal and Red Signal by Inorganic Photoelectric Converters 32G and 32R)

Subsequently, green light and red light of the light having passed through the organic photoelectric converter 80 are absorbed and photoelectrically converted in sequence respectively in the inorganic photoelectric converter 32G and the inorganic photoelectric converter 32R. In the inorganic photoelectric converter 32G, electrons corresponding to the incident green light are accumulated in the n region of the inorganic photoelectric converter 32G, and the accumulated electrons are transferred to the floating diffusion FD1 by the vertical transistor Tr1. Similarly, in the inorganic photoelectric converter 32R, electrons corresponding to the incident red light are accumulated in the n region of the inorganic photoelectric converter 32R, and the accumulated electrons are transferred to the floating diffusion FD2 by the transfer transistor Tr2.

權(quán)利要求

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