Photoelectric conversion element and imaging device
摘要
說明書
It is to be noted that, in the present embodiment, description is given of a case where electrons of pairs of electrons and holes (electron-hole pairs) generated by photoelectric conversion are read as signal electric charges (in a case where an n-type semiconductor region serves as a photoelectric conversion layer). In addition, in the drawings, “+ (plus)” attached to “p” or “n” indicates that p-type or n-type impurity concentration is high.
For example, floating diffusions (floating diffusion layers) FD1 (a region 36B in the semiconductor substrate 30), FD2 (a region 37C in the semiconductor substrate 30), and FD3 (a region 38C in the semiconductor substrate 30), transfer transistors Tr2 and Tr3, an amplifier transistor (a modulation element) AMP, a reset transistor RST, a selection transistor SEL, and multilayer wiring 40 are provided on a second surface (a front surface; 30S2) of the semiconductor substrate 30. The multilayer wiring 40 has, for example, a configuration in which wiring layers 41, 42, and 43 are stacked in an insulating layer 44.
It is to be noted that in the drawing, the first surface (the surface 30S1) side of the semiconductor substrate 30 is represented as a light incident side S1 and the second surface (the surface 30S2) side of the semiconductor substrate 30 is represented as a wiring layer side S2.
