Method for manufacturing a semiconductor storage device including a division film
地域：
Tokyo
摘要
In a method for manufacturing a memory, a first stacked body is formed by stacking a first insulating film and a first sacrificial film. A first columnar body including a first semiconductor portion extending in the first stacked body in the first direction and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion is formed. A second columnar body provided in a second direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion is formed. A second insulating film is formed above the first stacked body. A third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion is formed. A first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction is formed.
說明書
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This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2021-036506, filed Mar. 8, 2021, the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a semiconductor storage device and a method for manufacturing the same.
A semiconductor storage device, such as a NAND flash memory, may have a three-dimensional memory cell array in which a plurality of memory cell arrays are arranged three-dimensionally. Select gates are provided in such a three-dimensional memory cell array to select memory strings. However, a memory cell below a slit that divides the select gates is useless because the memory cell cannot store data.
權(quán)利要求
What is claimed is:1. A method for manufacturing a semiconductor storage device, the method comprising:forming a first stacked body by alternately stacking a first insulating film and a first sacrificial film in a first direction; forming a first columnar body including: (i) a first semiconductor portion extending in the first stacked body in the first direction, and (ii) a charge trapping film disposed on an outer peripheral surface of the first semiconductor portion; forming a second columnar body including: (i) a second semiconductor portion of the second columnar body disposed in a second direction intersecting the first direction and extending in the first stacked body in the first direction, and (ii) a charge trapping film disposed on an outer peripheral surface of the second semiconductor portion; forming a second insulating film above the first stacked body; forming a third columnar body including: (i) a third semiconductor portion provided on both the first columnar body and the second columnar body and extending in the second insulating film in the first direction, and (ii) a first gate insulating film disposed on an outer peripheral surface of the third semiconductor portion; and forming a first division insulating film extending in the first direction and a third direction, the third direction intersecting the first direction and the second direction, and the first division insulating film dividing the third semiconductor portion of the third columnar body in the second direction. 2. The method according to claim 1 , further comprising:after the formation of the second columnar body, forming a second stacked body by alternately stacking the second insulating film and a second sacrificial film in the first direction; forming a slit penetrating the first stacked body and the second stacked body; and forming a first conductive film between the first insulating films by removing the first and second sacrificial films via the slit and forming a second conductive film above the first stacked body, wherein the first division insulating film divides both the third semiconductor portion of the third columnar body and the second conductive film in the second direction. 3. The method according to claim 2 , further comprising:after the formation of the second columnar body, forming a third stacked body by alternately stacking the third insulating film and a third sacrificial film on the first stacked body in the first direction; and forming a fourth columnar body including a fourth semiconductor portion, extending in the third stacked body in the first direction, and a second gate insulating film disposed on an outer peripheral surface of the fourth semiconductor portion, wherein the slit penetrates the first to third stacked bodies, first and second spaces are formed by removing the first to third sacrificial films via the slit, and a third space is formed between the third insulating films, and the first and second conductive films are formed by burying a conductive material in the first to third spaces, and a third conductive film is formed between the third insulating films. 4. The method according to claim 3 , wherein a division insulating film electrically dividing into the first and second conductive films is formed in the slit. 5. The method according to claim 1 , wherein the first gate insulating film is a silicon oxide film. 6. The method according to claim 1 , wherein the first gate insulating film is a stacked film including a silicon oxide film, a silicon nitride film, and a silicon oxide film. 7. The method according to claim 1 , further comprising:forming a slit penetrating the first stacked body; forming a first conductive film between the first insulating films by removing the first sacrificial film via the slit; forming a first division insulating film extending in the first direction and the third direction, the third direction intersecting the first direction and the second direction, and the first division insulating film dividing both the third semiconductor portion of the third columnar body and the second insulating film in the second direction; and forming a second conductive film inside the first division insulating film. 8. The method according to claim 7 , further comprising:after the formation of the second columnar body, forming a second stacked body by alternately stacking a third insulating film and a third sacrificial film in the first direction on the first stacked body; and forming a fourth columnar body including a fourth semiconductor portion extending in the second stacked body in the first direction, and including a second gate insulating film disposed on an outer peripheral surface of the fourth semiconductor portion, wherein the slit penetrates the first and second stacked bodies, a first space is formed by removing the first and second sacrificial films via the slit, and a second space is formed between the third insulating films, and the first conductive film is formed by burying a conductive material in the first and second spaces, and a second conductive film is formed between the third insulating films. 9. The method according to claim 8 , wherein the second gate insulating film is a silicon oxide film. 10. The method according to claim 7 , wherein a division insulating film electrically dividing into the first and second conductive films is formed in the slit. 11. The method according to claim 7 , wherein a second gate insulating film is formed by stacking a silicon oxide film, a silicon nitride film, and a silicon oxide film. 12. The method according to claim 1 , further comprising:forming a first contact, the first contact commonly connected on the third semiconductor portion of each of the two third columnar bodies, above the first and second columnar bodies; forming a second contact on the first contact; and forming wiring on the second contact.
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