Method for manufacturing a semiconductor storage device including a division film
摘要
說明書
The columnar body CL3 is provided in a hole SH1 below the columnar body CL2. The third stacked body 3 includes a third insulating film 31 and a third conductive film 32 stacked in the Z direction. The columnar body CL3 includes a third insulator column 301, a semiconductor portion 302 provided on the outer periphery of the third insulator column 301, and a second gate insulating film 303 provided on the outer periphery of the semiconductor portion 302. Silicon oxide is used for the third insulator column 301. The semiconductor portion 302 functions as a channel region of the drain-side select gate SGD. For example, silicon may be used for the semiconductor portion 302, and for example, undoped silicon may be used. For example, a silicon oxide film may be used for the second gate insulating film 303, or a stacked film (ONO film) of a silicon oxide film, a silicon nitride film, and a silicon oxide film may be used. The drain-side select gate SGD as the second select gate portion is controlled for each block BLOCK, and the drain-side select gate SGD in the same block BLOCK is controlled to be on or off simultaneously. Accordingly, it is possible to prevent the cell current in the selected block from leaking to another non-selected block (off-leakage).
