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Method for manufacturing a semiconductor storage device including a division film

專利號(hào)
US12185539B2
公開日期
2024-12-31
申請(qǐng)人
Kioxia Corporation（JP Tokyo）
發(fā)明人
Kazuharu Yamabe; Yoshiro Shimojo
IPC分類
H10B43/27
技術(shù)領(lǐng)域
columnar,film,insulating,sgdo,cl2a,cl2b,body,stacked,conductive,bodies
地域： Tokyo

摘要

In a method for manufacturing a memory, a first stacked body is formed by stacking a first insulating film and a first sacrificial film. A first columnar body including a first semiconductor portion extending in the first stacked body in the first direction and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion is formed. A second columnar body provided in a second direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion is formed. A second insulating film is formed above the first stacked body. A third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion is formed. A first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction is formed.

說明書

As illustrated in FIG. 3B, in a plan view seen from the Z direction, the first division insulating film 50 skewers the initial columnar body CL2i in the X direction and divides the initial columnar body CL2i. Although the first division insulating film 50 overlaps a portion (central portion) of the initial columnar body CL2i, the first division insulating film 50 does not overlap the whole. Therefore, the columnar bodies CL2 remain as channels of the drain-side select gate SGDO on both sides of the first division insulating film 50, and the drain-side select gate SGD can function normally. Accordingly, the columnar body CL1 below the drain-side select gate SGD can be normally selected by the drain-side select gate SGD as a memory string. As a result, the dummy memory cells are not increased.

When the drain-side select gate SGDO does not function due to the division insulating film, the memory cell of the columnar body CL1 located below the division insulating film cannot be used for storing data and becomes a dummy memory cell. This wastes the memory cell array and hinders the miniaturization of the memory cell array 2m.

On the other hand, according to at least one embodiment, although the first division insulating film 50 partially overlaps the initial columnar body CL2i, the columnar body CL2 can be effectively used as the drain-side select gate SGDO. Therefore, the first division insulating film 50 can increase the data capacity of the memory cell array 2m and miniaturize the memory cell array 2m without increasing the dummy memory cell.

權(quán)利要求

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