Next, as illustrated in FIGS. 7A and 7B, the hole SH2 is formed in the second stacked body 2a from above the second stacked body 2a by using a lithography technique, an etching technique, or the like. FIG. 7B corresponds to a cross section taken along line D-D of FIG. 7A. Here, the hole SH2 is formed up to the interlayer insulating film 33 which is the etching stopper of the third stacked body 3a. In the region where the columnar body CL3 is provided, the hole SH2 is formed up to the semiconductor portion 302. As illustrated in FIG. 7A, the hole SH2 is formed in a substantially oblate shape, a substantially elliptical shape, or a substantially rectangular shape having a major axis or a minor axis in a direction inclined with respect to the X and Y directions in a plan view seen from the Z direction.
