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Method for manufacturing a semiconductor storage device including a division film

專利號(hào)
US12185539B2
公開日期
2024-12-31
申請(qǐng)人
Kioxia Corporation(JP Tokyo)
發(fā)明人
Kazuharu Yamabe; Yoshiro Shimojo
IPC分類
H10B43/27
技術(shù)領(lǐng)域
columnar,film,insulating,sgdo,cl2a,cl2b,body,stacked,conductive,bodies
地域: Tokyo

摘要

In a method for manufacturing a memory, a first stacked body is formed by stacking a first insulating film and a first sacrificial film. A first columnar body including a first semiconductor portion extending in the first stacked body in the first direction and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion is formed. A second columnar body provided in a second direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion is formed. A second insulating film is formed above the first stacked body. A third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion is formed. A first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction is formed.

說明書

Next, as illustrated in FIGS. 9A to 9C, the columnar body CL2 and the second stacked body 2 are etched to divide the initial columnar body CL2i at the substantially center thereof in the X direction by using a lithography technique and an etching technique. An insulating film is buried in the slit to form the first division insulating film 50. Accordingly, the first division insulating film 50 is formed to divide the initial columnar body CL2i at the substantially center thereof in the X direction. That is, as illustrated in FIG. 9A, in a planar shape of the hole SH2, the initial columnar body CL2i is divided so that the first division insulating film 50 passes the substantially center of the initial columnar body CL2i. It is preferable that the left and right areas of the columnar body CL2i after the division are substantially equal. For example, silicon oxide is used for the first division insulating film 50. It is noted that FIG. 9B illustrates a cross section along the F-F line of FIG. 9A, and FIG. 9C illustrates a cross section along the G-G line of FIG. 9A.

權(quán)利要求

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