Method for manufacturing a semiconductor storage device including a division film
摘要
說明書
As described above, according to the embodiment, the first division insulating film 50 is formed to skewer the initial columnar body CL2i in the X direction in a plan view seen from the Z direction and is divided into a pair of the two columnar bodies CL2a and CL2b. Although the first division insulating film 50 overlaps a portion of the central portion of the initial columnar body CL2i, the first division insulating film 50 does not overlap the columnar bodies CL2a and CL2b on both sides thereof. The columnar bodies CL2a and CL2b can function as two different drain-side select gates SGDO, and the columnar body CL1 below the columnar bodies CL2a and CL2b can function as a memory string. Accordingly, the first division insulating film 50 does not increase the number of dummy memory cells and enables the cell region in the block BLOCK to be effectively used. As a result, waste of the memory cell array can be reduced, and the memory cell array 2m can be further miniaturized.
