Method for manufacturing a semiconductor storage device including a division film
摘要
說(shuō)明書
The second embodiment is similar to the first embodiment in that a conductive layer BW and the second insulating film 21 are alternately arranged in a striped shape in a plan view seen from the Z direction. However, in the second embodiment, the conductive layer BW skewers the active area in the X direction, and an initial first semiconductor column AAi is divided into two. Accordingly, the initial first semiconductor column AAi is divided into two first semiconductor columns AA1 and AA2. That is, in the middle of the manufacturing process, the initial first semiconductor column AAi has a substantially oblate shape, a substantially elliptical shape, or a substantially rectangular shape and is divided into two by the formation of the conductive layer BW to form a pair of the first semiconductor columns AA1 and AA2. For example, a conductive metal such as tungsten (W) is used for the conductive layer BW. On the other hand, the second insulating film 21 is provided between the adjacent conductive layers BW and is provided between the two first semiconductor columns AA that are adjacent to each other in an inclined direction with respect to the X or Y direction. For example, an insulating material such as silicon oxide is used for the second insulating film 21. As described above, in the second embodiment, the conductive layer BW (drain-side select gate SGD) is provided between the paired first semiconductor columns AA1 and AA2. Other configurations of the planar layout of the second embodiment may be the same as the corresponding configuration of the planar layout of the first embodiment.
