Method for manufacturing a semiconductor storage device including a division film
摘要
說(shuō)明書(shū)
Similarly, the four columnar bodies CL2 in the upper stage corresponding to the second conductive films 22_3 and 22_4 can simultaneously output data to the bit lines BL1, BL4, BL2, and BL3, respectively. Similarly, the four columnar bodies CL2 in the upper stage corresponding to the second conductive films 22_5, 22_6, and 22_0 can simultaneously output data to the bit lines BL1, BL4, BL2, and BL3, respectively. The second conductive films 22_1 and 22_2, the second conductive films 22_3 and 22_4, and the second conductive films 22_5, 22_5, and 22_0 are driven at timings different from each other. Since the second conductive films 22_5 and 22_0 are conductive films at the end of the block BLOCK, the second conductive films 22_5 and 22_0 correspond to one columnar body CL2 in the upper stage, respectively.
Similarly, the active areas Aa arranged in the Y direction in the second and subsequent stages also correspond to four bit lines BL, respectively. Therefore, the data from the drain-side select transistors configured with the columnar bodies arranged in the second and subsequent stages can also be read out without contamination via different bit lines BL.
A ratio between the number of columnar bodies CL2 and the number of bit lines BL may be 1:n (n is an integer of 3 or more). Here, a ratio between the number of active areas Aa and the number of bit lines BL is 1:2×n. The number of the second conductive films 22 connected to each other (driven simultaneously) is also n, and thus, the number of data read simultaneously can be further increased.
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