Method for manufacturing a semiconductor storage device including a division film
摘要
說(shuō)明書
In general, according to at least one embodiment, a method for manufacturing a semiconductor storage device includes: forming a first stacked body by alternately stacking a first insulating film and a first sacrificial film in a first direction. The method includes forming a first columnar body including a first semiconductor portion stretching in the first direction in the first stacked body and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion. The method includes forming a second columnar body provided in a second direction intersecting the first direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion. The method includes forming a second insulating film above the first stacked body. The method includes forming a third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion. The method includes forming a first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction.
