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Method for manufacturing a semiconductor storage device including a division film

專利號(hào)
US12185539B2
公開日期
2024-12-31
申請(qǐng)人
Kioxia Corporation（JP Tokyo）
發(fā)明人
Kazuharu Yamabe; Yoshiro Shimojo
IPC分類
H10B43/27
技術(shù)領(lǐng)域
columnar,film,insulating,sgdo,cl2a,cl2b,body,stacked,conductive,bodies
地域： Tokyo

摘要

In a method for manufacturing a memory, a first stacked body is formed by stacking a first insulating film and a first sacrificial film. A first columnar body including a first semiconductor portion extending in the first stacked body in the first direction and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion is formed. A second columnar body provided in a second direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion is formed. A second insulating film is formed above the first stacked body. A third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion is formed. A first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction is formed.

說明書

FIG. 20 is a block diagram illustrating a configuration example of a semiconductor storage device to which any of the above embodiments is applied. A semiconductor storage device 100 is a NAND flash memory capable of non-volatilely storing data and is controlled by an external memory controller 1002. Communication between the semiconductor storage device 100 and the memory controller 1002 supports, for example, the NAND interface standard.

As illustrated in FIG. 20, the semiconductor storage device 100 includes, for example, a memory cell array MCA, a command register 1011, an address register 1012, a sequencer 1013, a driver module 1014, a row decoder module 1015, and a sense amplifier module 1016.

The memory cell array MCA includes a plurality of blocks BLK(0) to BLK(n) (n is an integer of 1 or more). The block BLK is a set of the plurality of memory cells capable of non-volatilely storing data and is used, for example, as an erase unit of data. The plurality of bit lines and the plurality of word lines are provided in the memory cell array MCA. Each memory cell is associated with, for example, one bit line and one word line. The detailed configuration of the memory cell array MCA will be described later.

The command register 1011 stores a command CMD received by the semiconductor storage device 100 from the memory controller 1002. The command CMD includes, for example, an instruction for causing the sequencer 1013 to execute a read operation, a write operation, an erase operation, and the like.

權(quán)利要求

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