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Method for manufacturing a semiconductor storage device including a division film

專利號(hào)
US12185539B2
公開日期
2024-12-31
申請(qǐng)人
Kioxia Corporation（JP Tokyo）
發(fā)明人
Kazuharu Yamabe; Yoshiro Shimojo
IPC分類
H10B43/27
技術(shù)領(lǐng)域
columnar,film,insulating,sgdo,cl2a,cl2b,body,stacked,conductive,bodies
地域： Tokyo

摘要

In a method for manufacturing a memory, a first stacked body is formed by stacking a first insulating film and a first sacrificial film. A first columnar body including a first semiconductor portion extending in the first stacked body in the first direction and a charge trapping film provided on an outer peripheral surface of the first semiconductor portion is formed. A second columnar body provided in a second direction of the first columnar body and including a second semiconductor portion stretching in the first stacked body in the first direction and a charge trapping film on an outer peripheral surface of the second semiconductor portion is formed. A second insulating film is formed above the first stacked body. A third columnar body including a third semiconductor portion provided on both the first columnar body and the second columnar body and stretching in the second insulating film in the first direction and a first gate insulating film provided on an outer peripheral surface of the third semiconductor portion is formed. A first division insulating film extending in the first direction and a third direction intersecting the first direction and the second direction and dividing the third semiconductor portion of the third columnar body in the second direction is formed.

說明書

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The embodiments are not limited to the present disclosure. In the following embodiments, a vertical direction of a semiconductor substrate indicates a relative direction when a surface on which a semiconductor element is provided is set to face up, and thus, the direction may be different from the vertical direction according to the gravitational acceleration. The drawings are schematic or conceptual, and thus, the ratio of each portion is not always the same as the actual one. In the specification and the drawings, the same components as those described above with respect to the existing drawings are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

First Embodiment

FIG. 1A is a schematic perspective view illustrating a configuration example of a semiconductor storage device 100a according to a first embodiment. FIG. 1B is a schematic plan view illustrating a configuration example of a second stacked body 2. The semiconductor storage device 100a according to the embodiment is a non-volatile memory having a memory cell having a three-dimensional structure. A stacking direction of the second stacked body 2 is set as a Z direction, a direction intersecting the Z direction, for example, one orthogonal direction is set as a Y direction, and a direction orthogonal to the Z direction and the Y direction is set as an X direction.

權(quán)利要求

1
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