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Sub-band selection at cellular base station for non-overlapped or partially overlapped full duplex operation

專(zhuān)利號(hào)
US12200629B2
公開(kāi)日期
2025-01-14
申請(qǐng)人
AT&T Intellectual Property I, L.P.（US GA Atlanta）
發(fā)明人
Aditya Chopra; Salam Akoum; Thomas Novlan
IPC分類(lèi)
H04W72/04; H04L5/00; H04L5/14; H04W52/24; H04W72/0446; H04W72/541
技術(shù)領(lǐng)域
receiver,or,band,sub,duplex,in,network,self,channel,be
地域： GA GA Atlanta

摘要

Aspects of the subject disclosure may include, for example, determining a self-interference channel response of a transceiver of a mobile base station having a transmitter and a receiver. The self-interference channel response spans multiple sub-bands of a predetermined mobile cellular frequency channel. A first sub-band of the multiple sub-bands is identified according to the self-interference channel response and, an estimate is determined, at the receiver, of a first coupled transmit power level of the transmitter when operating within the first sub-band. A receiver sensitivity is adjusted according to the first coupled transmit power level to obtain an adjustment adapted to increase receiver sensitivity, while restricting operation of the receiver to a substantially linear region. The adjustment allows a transmission within the first sub-band and a reception within a second sub-band of the plurality of sub-bands to occur simultaneously at the mobile base station. Other embodiments are disclosed.

說(shuō)明書(shū)

In the subject specification, terms such as “store,” “storage,” “data store,” data storage,” “database,” and substantially any other information storage component relevant to operation and functionality of a component, refer to “memory components,” or entities embodied in a “memory” or components comprising the memory. It will be appreciated that the memory components described herein can be either volatile memory or nonvolatile memory, or can comprise both volatile and nonvolatile memory, by way of illustration, and not limitation, volatile memory, non-volatile memory, disk storage, and memory storage. Further, nonvolatile memory can be included in read only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM), or flash memory. Volatile memory can comprise random access memory (RAM), which acts as external cache memory. By way of illustration and not limitation, RAM is available in many forms such as synchronous RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), Synchlink DRAM (SLDRAM), and direct Rambus RAM (DRRAM). Additionally, the disclosed memory components of systems or methods herein are intended to comprise, without being limited to comprising, these and any other suitable types of memory.

權(quán)利要求

1
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