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Light-emitting device

專利號
US12200953B2
公開日期
2025-01-14
申請人
SHARP KABUSHIKI KAISHA（JP Sakai）
發(fā)明人
Takayuki Naka; Yoshihiro Ueta; Noboru Iwata
IPC分類
H01L51/50; H10K50/115; H10K50/17; H10K59/35; H10K85/10; H10K50/15; H10K102/00
技術(shù)領(lǐng)域
htl,eml,emitting,quantum,light,layer,il,10r,10g,etl
地域： Sakai

摘要

A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

說明書

Therefore, the inventors of the present application conducted further extensive studies. As a result, the inventors of the present application found that the problem described above can be solved by making the layer thickness of the intermediate layer between the EML and the layer composed of a metal chalcogenide in the light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength greater than the layer thicknesses of the corresponding intermediate layers of the other light-emitting elements. Therefore, in the present embodiment, the layer thicknesses of the ILs 4R, 4G, 4B are each set so that the layer thickness of the IL 4B is greater than the layer thickness of the IL 4R, and the layer thickness of the IL 4B is greater than the layer thickness of the IL 4G, as described above. The reason for the above will be described in more detail below with reference to FIG. 2 to FIG. 5.

FIG. 3 to FIG. 5 illustrate the energy bands and layer thicknesses of each layer in the light-emitting elements 10R, 10G, 10B according to the present embodiment manufactured by the method described above. FIG. 3 illustrates the energy band and the layer thickness of each layer in the light-emitting element 10R. FIG. 4 illustrates the energy band and the layer thickness of each layer in the light-emitting element 10G. FIG. 5 illustrates the energy band and the layer thickness of each layer in the light-emitting element 10B.

權(quán)利要求

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