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Light-emitting device

專(zhuān)利號(hào)
US12200953B2
公開(kāi)日期
2025-01-14
申請(qǐng)人
SHARP KABUSHIKI KAISHA（JP Sakai）
發(fā)明人
Takayuki Naka; Yoshihiro Ueta; Noboru Iwata
IPC分類(lèi)
H01L51/50; H10K50/115; H10K50/17; H10K59/35; H10K85/10; H10K50/15; H10K102/00
技術(shù)領(lǐng)域
htl,eml,emitting,quantum,light,layer,il,10r,10g,etl
地域： Sakai

摘要

A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

說(shuō)明書(shū)

The electron affinity EAHTL corresponds to an energy difference between a vacuum level (not illustrated) and a conduction band minimum (CBM) of the HTLs 3R, 3G, 3B. The ionization potential IPHTL corresponds to an energy difference between the vacuum level described above and a valence band maximum (VBM) of the HTLs 3R, 3G, 3B. The electron affinity EAIL corresponds to an energy difference between the vacuum level described above and the CBM of the ILs 4R, 4G, 4B. The ionization potential IPIL corresponds to an energy difference between the vacuum level described above and the VBM of the ILs 4R, 4G, 4B. The electron affinity EAEMLR corresponds to an energy difference between the vacuum level described above and the CBM of the EML 5R. The ionization potential IPEMLR corresponds to an energy difference between the vacuum level described above and the VBM of the EML 5R. The electron affinity EAEMLG corresponds to an energy difference between the vacuum level described above and the CBM of the EML 5G. The ionization potential IPEMLG corresponds to an energy difference between the vacuum level described above and the VBM of the EML 5G. The electron affinity EAEMLB corresponds to an energy difference between the vacuum level described above and the CBM of the EML 5B. The ionization potential IPEMLB corresponds to an energy difference between the vacuum level described above and the VBM of the EML 5B. The electron affinity EAETL corresponds to an energy difference between the vacuum level described above and the CBM of the ETL 6R. The ionization potential IPETL corresponds to an energy difference between the vacuum level described above and the VBM of the ETL 6.

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