Light-emitting device
摘要
說明書
When the CBM of the EML 5B is thus shallower than the CBMs of the EMLs 5R, 5G, the injection of electrons into the light-emitting element 10B is more difficult than the injection of electrons into the other light-emitting elements 10R, 10G.
Therefore, in the present embodiment, the layer thickness of the IL 4B is made greater than the layer thickness of the ILs 4R, 4G, thereby suppressing the injection of positive holes into the EML 5B. Thus, in the light-emitting element 10B, a carrier balance between positive holes and electrons can be achieved, and the recombination probability of the positive holes and the electrons can be improved. As a result, the equivalent luminance can be obtained in the light-emitting element 10B as in the other light-emitting elements 10R, 10G.
Thus, according to the present embodiment, even when a metal chalcogenide is used in the HTL 3 as described above, it is possible to suppress equivalent charging in the light-emitting element 10B and the other light-emitting elements 10R, 10G. Further, a balance in luminance can be achieved between the light-emitting element 10B and the other light-emitting elements 10R, 10G.
Further, according to the present embodiment, by making the layer thickness of the IL 4B larger than the layer thicknesses of the ILs 4R, 4G, it is possible to achieve the equivalent carrier balance in the light-emitting element 10B as in the other light-emitting elements 10R, 10G. Thus, according to the present embodiment, it is not necessary to change the CBM of the ETL 6 by changing the material of the ETL 6 depending on the light-emitting element 10, and the ETL 6 can be made common.
