Light-emitting device
摘要
說明書
That is, given TILR, TILG, TILB as the layer thickness of the IL 4R, the layer thickness of the IL 4G, and the layer thickness of the IL 4B in this order, then desirably (TILR+0.5 nm)≤TILB≤(TILR+12.5 nm) and (TILG+0.5 nm)≤TILB≤(TILG+12.5 nm).
Thus, by making the difference between the layer thicknesses of the IL 4B and the ILs 4R, 4G 0.5 nm or greater, it is possible to form the IL 4 with a significant difference between the light-emitting element 10B and the light-emitting elements 10R, 10G other than the light-emitting element 10B. That is, in the above formula, (TILR+0.5 nm) and (TILG+0.5 nm) are uniform films and indicate values of the lowest limit allowing film formation with a significant difference. Further, as described above, by making the difference in layer thickness between the IL 4B and the ILs 4R, 4G 12.5 nm or less, it is possible to effectively inject positive holes by tunneling from the HTL 3B into the EML 5B. That is, in the above formula, (TILR+12.5 nm) and (TILG+12.5 nm) indicate values of the desired upper limit allowing effective tunneling by the positive holes.
Note that, as described above, the layer thickness TILB of the IL 4B is greater than the layer thickness TILR of the IL 4R and the layer thickness TILG of the IL 4G. Accordingly, the difference in layer thickness between the IL 4B and the ILs 4R, 4G is indicated by TILB?TILR (where TILB>TILR) Or TILB?TILG (where TILB>TILG).
