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Light-emitting device

專利號(hào)
US12200953B2
公開日期
2025-01-14
申請(qǐng)人
SHARP KABUSHIKI KAISHA（JP Sakai）
發(fā)明人
Takayuki Naka; Yoshihiro Ueta; Noboru Iwata
IPC分類
H01L51/50; H10K50/115; H10K50/17; H10K59/35; H10K85/10; H10K50/15; H10K102/00
技術(shù)領(lǐng)域
htl,eml,emitting,quantum,light,layer,il,10r,10g,etl
地域： Sakai

摘要

A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

說明書

The HTL 12 can be formed by, for example, an application method (method of dissolving the organic hole transport material described above in a solvent, and spin coating and then drying the solvent) or a dip coating method.

Note that, in the present embodiment as well, from the perspective of the versatility of a manufacturing apparatus, desirably the manufacturing apparatuses of each layer in the light-emitting element 10 are separated from each other. Accordingly, desirably the manufacturing apparatus of the HIL 11 and the film formation apparatus used in the next process (that is, manufacturing apparatus of the layer formed on the HIL 11) are separated from each other. Nevertheless, when the HIL 11 is formed and subsequently the substrate on which the HIL 11 is formed is transported to the manufacturing apparatus separated from the manufacturing apparatus of the HIL 11, the substrate on which the HIL 11 is formed is exposed to the atmosphere between the two manufacturing apparatuses.

權(quán)利要求

1
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