As illustrated in FIG. 7 to FIG. 9, the difference between the light-emitting elements 10R, 10G, 10B according to the present embodiment and the light-emitting elements 10R, 10G, 10B according to the first embodiment is only the layers between the anodes 2R, 2G, 2B and the EMLs 5R, 5B, 5B. In the present embodiment, as illustrated in FIG. 7 to FIG. 9, the HILs 11R, 11G, 11B and the HTLs 12R, 12G, 12B are provided in this order between the anodes 2R, 2G, 2B and the EMLs SR, 5G, 5B. The NiO layers as the HILs 11R, 11G, 11B have an electron affinity (hereinafter referred to as “EAHTL”) of 1.9 eV, and an ionization potential (hereinafter referred to as “IPHTL”) of 5.4 eV. Further, the PVK layers as the HTLs 12R, 12G, 12B have an electron affinity EAHTL of 2.2 eV, and an ionization potential IPHTL of 5.8 eV.
