In the non-transmission area NTA, the first buffer layer BUF1 may be disposed on the substrate SUB. The first buffer layer BUF1 may prevent a penetration of impurities from the substrate SUB. The first buffer layer BUF1 may include silicon oxide, silicon nitride, silicon oxynitride, etc., within the spirit and the scope of the disclosure.

In the non-transmission area NTA, the light block layer 200 may be disposed on the first buffer layer BUF1. The light block layer 200 may include a material having a relatively low light transmittance. For example, the light block layer 200 may include a metal.

In the non-transmission area NTA, the second buffer layer BUF2 may be disposed on the light block layer 200. The second buffer layer BUF2 may prevent a penetration of impurities from the light block layer 200. The second buffer layer BUF2 may include silicon oxide, silicon nitride, silicon oxynitride, etc., within the spirit and the scope of the disclosure.

In the non-transmission area NTA, the active pattern ACT may be disposed on the second buffer layer BUF2. The active pattern ACT may include a semiconductor material. For example, the active pattern ACT may include a silicon-based semiconductor material. As an example, the active pattern ACT may include an oxide-based semiconductor material.