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Semiconductor devices with threshold voltage modulation layer

專利號
US12213297B2
公開日期
2025-01-28
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.(TW Hsinchu)
發(fā)明人
Shih-Hao Lin; Chih-Hsiang Huang; Shang-Rong Li; Chih-Chuan Yang; Jui-Lin Chen; Ming-Shuan Li
IPC分類
H01L21/8238; H01L21/02; H01L21/28; H01L29/06; H01L29/423; H01L29/49; H01L29/66; H01L29/786; H10B10/00
技術(shù)領(lǐng)域
layer,fins,wfm,layers,gate,vt,capping,in,channel,stacks
地域: Hsin-Chu

摘要

A method comprises forming a first fin including alternating first channel layers and first sacrificial layers and a second fin including alternating second channel layers and second sacrificial layers, forming a capping layer over the first and the second fin, forming a dummy gate stack over the capping layer, forming source/drain (S/D) features in the first and the second fin, removing the dummy gate stack to form a gate trench, removing the first sacrificial layers and the capping layer over the first fin to form first gaps, removing the capping layer over the second fin and portions of the second sacrificial layers to from second gaps, where remaining portions of the second sacrificial layers and the capping layers form a threshold voltage (Vt) modulation layer, and forming a metal gate stack in the gate trench, the first gaps, and the second gaps.

說明書

FIG. 6 illustrates a method 100 for forming the device 200, or portions thereof, in accordance with some embodiments of the present disclosure. The methods 100 is discussed in reference to FIGS. 7A-20B, where FIGS. 7A, 8A, 9A, 10A, 11A, 12A, 13A, 14A, 15A, 16A, 17A, 18A, 19A, and 20A are cross-sectional views of FIG. 4 taken along line A-A′, and FIGS. 7B, 8B, 9B, 10B, 11B, 12B, 13B, 14B, 15B, 16B, 17B, 18B, 19B, and 20B are cross-sectional views of FIG. 4 taken along line B-B′, all at intermediate steps of the methods 100. It is noted that method 100 is merely an example and are not intended to limit the present disclosure beyond what is explicitly recited in the claims. Additional operations can be performed before, during, and after the method 100, and some operations described can be replaced, eliminated, or moved around for additional embodiments of the methods.

權(quán)利要求

1
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