白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Semiconductor devices with threshold voltage modulation layer

專利號
US12213297B2
公開日期
2025-01-28
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.(TW Hsinchu)
發(fā)明人
Shih-Hao Lin; Chih-Hsiang Huang; Shang-Rong Li; Chih-Chuan Yang; Jui-Lin Chen; Ming-Shuan Li
IPC分類
H01L21/8238; H01L21/02; H01L21/28; H01L29/06; H01L29/423; H01L29/49; H01L29/66; H01L29/786; H10B10/00
技術(shù)領(lǐng)域
layer,fins,wfm,layers,gate,vt,capping,in,channel,stacks
地域: Hsin-Chu

摘要

A method comprises forming a first fin including alternating first channel layers and first sacrificial layers and a second fin including alternating second channel layers and second sacrificial layers, forming a capping layer over the first and the second fin, forming a dummy gate stack over the capping layer, forming source/drain (S/D) features in the first and the second fin, removing the dummy gate stack to form a gate trench, removing the first sacrificial layers and the capping layer over the first fin to form first gaps, removing the capping layer over the second fin and portions of the second sacrificial layers to from second gaps, where remaining portions of the second sacrificial layers and the capping layers form a threshold voltage (Vt) modulation layer, and forming a metal gate stack in the gate trench, the first gaps, and the second gaps.

說明書

Referring to FIG. 27, alternative to completely removing the sacrificial layers 205 of the fins 204 at operation 522, the method 500 may partially remove the sacrificial layers 205 of the fins 204 at operation 722 as depicted in FIGS. 27, 28A and 28B. The remaining portions of the sacrificial layers 205 are disposed over the top and bottom surfaces of the channel layers 207 (except the top surface of the topmost channel layer 207) and the top surfaces of the base fins 204B. Thereafter, the method 500 forms the capping layer 216 over the channel layers 207 and the base fins 204B as shown in FIGS. 29A and 29B. The remaining portions of the sacrificial layers 205 and the capping layer 216 are collectively referred to as the Vt modulation layer 218. In other words, the Vt modulation layer 218 includes the remaining portions of the sacrificial layer 205 and the capping layer 216 wrapping around the sacrificial layer 205. The method 500 may then proceeds to operation 528 to form gate stacks as discussed in detail above.

權(quán)利要求

1
微信群二維碼
意見反饋