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Dielectric barrier plasma generator and plasma discharge starting method for dielectric barrier plasma generator

專利號(hào)
US12219688B2
公開日期
2025-02-04
申請(qǐng)人
Ushio Denki Kabushiki Kaisha(JP Tokyo)
發(fā)明人
Takahiro Hiraoka; Kensuke Nakamura; Takanori Samejima
IPC分類
H05H1/00; H05H1/24
技術(shù)領(lǐng)域
blowout,plasma,dielectric,electrode,voltage,outlet,gas,generator,substrate,in
地域: Tokyo

摘要

A dielectric barrier plasma generator includes: a dielectric substrate, a high-voltage electrode provided on a first surface of the dielectric substrate, a low-voltage electrode provided to face a second surface of the dielectric substrate, a power introduction section provided at a first end of the high-voltage electrode, a gas channel formed from a first end to a second end thereof between the dielectric substrate and the low-voltage electrode to allow gas to flow from the first end of the gas channel to the second end thereof, and a blowout outlet formed at the second end of the gas channel to blow out the gas that has flown through the gas channel and plasma that has been generated in the gas channel. The dielectric substrate includes a portion having a thickness being thinner when being closer to the blowout outlet.

說明書

As shown in FIG. 4, the groove 22 is provided with plurality of gas introduction paths 24 that are configured to be through holes at the first end thereof, and arranged with equal intervals in the width direction. The number of gas introduction paths 24 can be any number; however, it is preferably at least two as shown in the present embodiment. The configuration including the at least two gas introduction paths 24 readily make the gas flow in the gas channel 25 more laminar flow because the gas is introduced into the gas channel 25 from at least two locations. The plurality of gas introduction paths 24 are preferably arranged in the width direction so that gas is widely introduced at the location where the gas is introduced into the gas channel 25. The gas introduction path 24 may be a single wide open hole in the width direction.

As shown in FIGS. 2 and 3, the low-voltage electrode 20 and a gas buffer substrate 26 are stacked such that the lower surface of the low-voltage electrode 20 (the surface being opposite to a surface facing the dielectric substrate 12) is in contact with the gas buffer substrate 26. The gas buffer substrate 26 has a cavity 27 thereinside.

The cavity 27 inside the gas buffer substrate 26 is connected to a gas delivery device 40 (see FIG. 2). The gas that has been delivered from the gas delivery device 40 is stored in the cavity 27 and then flows through the plurality of gas introduction paths 24 into the gas channels 25.

權(quán)利要求

1
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