Electronic device
摘要
說明書
The circuit layer 112 may be disposed on the base layer 111. The circuit layer 112 may include an insulation layer, a semiconductor pattern, a conductive pattern and a signal line. The insulation layer, the semiconductor layer and the conductive layer may be provided by a method such as coating and deposition, and then the insulation layer, the semiconductor layer and the conductive layer may be selectively patterned through a plurality of photolithography processes. Thereafter, the semiconductor pattern, the conductive pattern and the signal line, which are contained in the circuit layer 112, may be provided.
The light emitting element layer 113 may be disposed on the circuit layer 112. The light emitting element layer 113 may include a light emitting element which generates and/or emits light. In an embodiment, for example, the light emitting element layer 113 may include an organic light emitting material, a quantum dot, a quantum rod or a micro-LED.
The encapsulation layer 114 may be disposed on the light emitting element layer 113. Although the encapsulation layer 114 may include an inorganic layer, an organic layer and an inorganic layer, which are sequentially stacked, the invention is not limited to the above-described layers constituting the encapsulation layer 114.
