In some embodiments, a stacked-die processor has a first die, a second die, and a third die. In some embodiments, a first microfluidic volume is located between the first die and the second die, and a second microfluidic volume is located between second die and the third die. In some embodiments, a first electrochemical fluid is located in the first microfluidic volume and a second electrochemical fluid is located in the second microfluidic volume. The first microfluidic volume and the second microfluidic volume form at least part of an electrochemical chamber that is divided by the second die and an ion-transfer membrane. In some embodiments, a first electrode and a second electrode contacting the first electrochemical fluid and the second electrochemical fluid, respectively, allows the electrochemical chamber to provide electrical power to at least the second die. In some embodiments, one or more TSVs located in heat transfer structures or other structures between the second die and the first die and/or third die can transmit electrical power from the electrodes to different parts of the processor.

In some embodiments, a flow direction of the first electrochemical fluid and the second electrochemical fluid are oriented in the same direction relative to the processor. In some embodiments, the flow direction of the first electrochemical fluid and the second electrochemical fluid are oriented different directions relative to the processor. For example, a flow direction of the first electrochemical fluid may be opposite a flow direction of the second electrochemical fluid relative to the processor. In some examples, orienting the flow directions opposite one another may allow the first electrochemical fluid and second electrochemical fluid to more efficiently receive heat from the dies and/or heat transfer structures of the stacked-die processor and cool the stacked-die processor.