[B3] In some embodiments, the first wafer of [B1] or [B2] further includes through-silicon vias (TSVs) electrically connecting the first die to the second die.
[B4] In some embodiments, the second wafer of [B3] further includes TSVs electrically connecting the third die to the fourth die.
[B5] In some embodiments, a first flow direction of the electrochemical fluid of any of [B1] through [B4] through the first microfluidic volume is opposite a second flow direction of the electrochemical fluid through the second microfluidic volume.
[C1] In some embodiments, a method of providing power and cooling to a stacked-die processor includes providing an electrochemical fluid to a microfluidic volume of the stacked-die processor, generating electrical power at the stacked-die processor with the electrochemical fluid, receiving heat from the stacked-die processor with the electrochemical fluid in the microfluidic volume, and exhausting the heat from the electrochemical fluid at a heat exchanger.
[C2] In some embodiments, the method of [C1] further includes recharging the electrochemical fluid at a charging device.
[C3] In some embodiments, generating the electrical power at the stacked-die processor with the electrochemical fluid of [C1] or [C2] includes transferring ions across an ion-transfer membrane located in the microfluidic volume.