In this embodiment, described as an example is, but not limited to, a case where the upper face of the oxide layer 124a′ is polycrystallized to have grains. Alternatively, for example, a technique such as sputtering and the CVD may be used to take advantage of voluntary growth of the nuclei to form the grains in a portion of at least the upper face of the oxide layer 124a′.
In this embodiment, described as an example is, but not limited to, a case where the upper face of the oxide layer 124a′ is polycrystallized. Alternatively, the oxide layer 124a′ may entirely be made of a polycrystalline oxide.
In this embodiment, described as an example is, but not limited to, a case where the upper face of the oxide layer 124a′ contains grains. Alternatively, the oxide layer 124a′ may entirely contain grains.
Note that, in the upper face of the oxide layer 124a′, the grains may discretely be distributed. Moreover, the grains may be crystal grains containing crystals or amorphous phases.
Other than the above features, the second embodiment is the same as the first embodiment. Hence, the second embodiment will not be elaborated upon any further here.