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Light-emitting element and light-emitting device

專利號
US12219788B2
公開日期
2025-02-04
申請人
SHARP KABUSHIKI KAISHA(JP Sakai)
發(fā)明人
Kenji Kimoto
IPC分類
H01L51/50; H10K50/11; H10K50/15; H10K50/16; H10K101/40; H10K102/00
技術(shù)領(lǐng)域
oxide,layer,emitting,74b,74a,light,124b,124a,electrode,24c
地域: Osaka

摘要

A light-emitting element includes: a first electrode serving as an anode; a second electrode serving as a cathode; a light-emitting layer, of a first wavelength range, provided between the first electrode and the second electrode; an oxide layer provided between the light-emitting layer of the first wavelength range and the first electrode of the first electrode and the second electrode; and an oxide layer provided between the oxide layer and the second electrode, and having contact with the oxide layer. Either the oxide layer or the oxide layer whichever farther away from the light-emitting layer of the first wavelength range is made of a semiconductor. A density of oxygen atoms in the oxide layer is lower than a density of oxygen atoms in the oxide layer.

說明書

Note that the density of the oxygen atoms in the oxide layer 74a is higher than or equal to 95% of the density of the oxygen atoms in the oxide layer 74b. In such a case, the oxygen atoms are likely to move, and the electric dipoles 1 are likely to form. More preferably, the density of the oxygen atoms in the oxide layer 74a is higher than or equal to 84% of the density of the oxygen atoms in the oxide layer 74b. In such a case, the electric dipoles 1 are formed more efficiently, making it possible to inject the electrons more efficiently. Still more preferably, the density of the oxygen atoms in the oxide layer 74a is lower than or equal to 80% of the density of the oxygen atoms in the oxide layer 74b, yet still more preferably, lower than or equal to 75%, and yet still more preferably, lower than or equal to 70%. In such a case, the electric dipoles 1 are formed more efficiently, making it possible to inject the electrons more efficiently.

The second oxide layer 74a serving as an electron-transport layer is preferably made of an n-type semiconductor. The second oxide layer 74a serving as an electron-transport layer has a carrier density (a density of the electrons) of preferably 1×105 cm?3 or higher. Moreover, the second oxide layer 74a serving as an electron-transport layer has a carrier density (a density of the electrons) of preferably 1×1017 cm?3 or lower.

權(quán)利要求

1
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