Note that the density of the oxygen atoms in the oxide layer 74a is higher than or equal to 95% of the density of the oxygen atoms in the oxide layer 74b. In such a case, the oxygen atoms are likely to move, and the electric dipoles 1 are likely to form. More preferably, the density of the oxygen atoms in the oxide layer 74a is higher than or equal to 84% of the density of the oxygen atoms in the oxide layer 74b. In such a case, the electric dipoles 1 are formed more efficiently, making it possible to inject the electrons more efficiently. Still more preferably, the density of the oxygen atoms in the oxide layer 74a is lower than or equal to 80% of the density of the oxygen atoms in the oxide layer 74b, yet still more preferably, lower than or equal to 75%, and yet still more preferably, lower than or equal to 70%. In such a case, the electric dipoles 1 are formed more efficiently, making it possible to inject the electrons more efficiently.
The second oxide layer 74a serving as an electron-transport layer is preferably made of an n-type semiconductor. The second oxide layer 74a serving as an electron-transport layer has a carrier density (a density of the electrons) of preferably 1×105 cm?3 or higher. Moreover, the second oxide layer 74a serving as an electron-transport layer has a carrier density (a density of the electrons) of preferably 1×1017 cm?3 or lower.