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Light-emitting element and light-emitting device

專利號(hào)
US12219788B2
公開(kāi)日期
2025-02-04
申請(qǐng)人
SHARP KABUSHIKI KAISHA(JP Sakai)
發(fā)明人
Kenji Kimoto
IPC分類
H01L51/50; H10K50/11; H10K50/15; H10K50/16; H10K101/40; H10K102/00
技術(shù)領(lǐng)域
oxide,layer,emitting,74b,74a,light,124b,124a,electrode,24c
地域: Osaka

摘要

A light-emitting element includes: a first electrode serving as an anode; a second electrode serving as a cathode; a light-emitting layer, of a first wavelength range, provided between the first electrode and the second electrode; an oxide layer provided between the light-emitting layer of the first wavelength range and the first electrode of the first electrode and the second electrode; and an oxide layer provided between the oxide layer and the second electrode, and having contact with the oxide layer. Either the oxide layer or the oxide layer whichever farther away from the light-emitting layer of the first wavelength range is made of a semiconductor. A density of oxygen atoms in the oxide layer is lower than a density of oxygen atoms in the oxide layer.

說(shuō)明書(shū)

In the light-emitting element 82R illustrated in FIG. 15(a), the first electrode 22 is positioned above the light-emitting layer 24c of the first wavelength range. The second electrode 25 is positioned below the light-emitting layer 24c of the first wavelength range. A portion of at least the upper face of the oxide layer 74a′ in contact with the oxide layer 74b is polycrystalline. That is, the upper face of the oxide layer 74a′ contains grains. The grains contained in the upper face of the oxide layer 74a′ increase an area of an interface between the upper face of the oxide layer 74a′ and the oxide layer 74b. Such a feature makes it possible to form electric dipoles more efficiently. Hence, in the light-emitting element 82R, the electrons can be injected efficiently.

In the light-emitting element 82R illustrated in FIG. 15(b), the first electrode 22 is positioned above the light-emitting layer 24c of the first wavelength range. The second electrode 25 is positioned below the light-emitting layer 24c of the first wavelength range. A portion of at least the upper face of the oxide layer 74a′ in contact with the oxide layer 74b′ is polycrystalline. The oxide layer 74b′ is made of an amorphous oxide. That is, the upper face of the oxide layer 74a′ contains grains.

權(quán)利要求

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