Light-emitting element and light-emitting device
摘要
說(shuō)明書(shū)
In the light-emitting element according to any one of the thirty third to forty seventh aspects, an energy difference between a lower end of a conduction band and an upper end of a valence band in the first oxide layer is larger than an energy difference between a lower end of a conduction band and an upper end of a valence band in the second oxide layer.
In the light-emitting element according to any one of the thirty third to forty eighth aspects, a density of electrons in the second oxide layer is higher than a density of electrons in the first oxide layer.
In the light-emitting aspect according to the thirty third to forty ninth aspects, an electron affinity of the second oxide layer is greater than an electron affinity of the light-emitting layer.
An electron affinity of the first oxide layer is smaller than an electron affinity of the light-emitting layer.
In the light-emitting element according to any one of the thirty third to fiftieth aspects, the first oxide layer has a film thickness of 0.2 nm or more and 5 nm or less.
In the light-emitting element according to fifty first aspect, the first oxide layer has a film thickness of 0.8 nm or more and 3 nm or less.
In the light-emitting element according to any one of the thirty third to fifty second aspects, the density of the oxygen atoms in the second oxide layer is higher than or equal to 50%, and lower than or equal to 95%, of the density of the oxygen atoms in the first oxide layer.
