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Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same

專(zhuān)利號(hào)
US12225720B2
公開(kāi)日期
2025-02-11
申請(qǐng)人
SANDISK TECHNOLOGIES LLC（US TX Addison）
發(fā)明人
Ryousuke Itou; Akihisa Sai; Kenzo Iizuka
IPC分類(lèi)
H10B41/27; H01L21/3213; H01L21/768; H10B41/10; H10B43/10; H10B43/27; H01L23/522; H01L23/532
技術(shù)領(lǐng)域
backside,trench,dielectric,fill,layer,material,tier,73b,structures,bridge
地域： TX TX Addison

摘要

A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

說(shuō)明書(shū)

FIG. 23B is a horizontal cross-sectional view of the first exemplary structure along the horizontal plane B-B′ of FIG. 23A. The hinged vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 23A.

FIG. 24A is a vertical cross-sectional view of the first exemplary structure after formation of backside trench fill structures in the backside trenches according to an embodiment of the present disclosure.

FIG. 24B is a horizontal cross-sectional view of the first exemplary structure along the horizontal plane B-B′ of FIG. 24A. The hinged vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 24A.

FIG. 24C is a vertical cross-sectional view of the first exemplary structure along the vertical plane C-C′ of FIG. 24B.

FIG. 24D is a top-down view of the first exemplary structure of FIGS. 24A-24C. The hinged vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 24A. The hinged vertical plane C-C′ corresponds to the plane of the vertical cross-sectional view of FIG. 24C.

權(quán)利要求

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