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Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same

專利號
US12225720B2
公開日期
2025-02-11
申請人
SANDISK TECHNOLOGIES LLC（US TX Addison）
發(fā)明人
Ryousuke Itou; Akihisa Sai; Kenzo Iizuka
IPC分類
H10B41/27; H01L21/3213; H01L21/768; H10B41/10; H10B43/10; H10B43/27; H01L23/522; H01L23/532
技術(shù)領(lǐng)域
backside,trench,dielectric,fill,layer,material,tier,73b,structures,bridge
地域： TX TX Addison

摘要

A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

說明書

FIG. 32C is a vertical cross-sectional view of the second exemplary structure along the vertical plane C-C′ of FIG. 32B.

FIG. 33A is a vertical cross-sectional view of the second exemplary structure after formation of a second patterned photoresist layer according to an embodiment of the present disclosure.

FIG. 33B is a top-down view of the second exemplary structure of FIG. 33A. The hinged vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 33A.

FIG. 34A is a vertical cross-sectional view of the second exemplary structure after formation of second bridge structures by a second boron implantation process according to an embodiment of the present disclosure.

FIG. 34B is a top-down view of the second exemplary structure of FIG. 34A. The hinged vertical plane A-A′ corresponds to the plane of the vertical cross-sectional view of FIG. 34A.

FIG. 34C is a vertical cross-sectional view of the second exemplary structure along the vertical plane C-C′ of FIG. 34B.

權(quán)利要求

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