Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same
摘要
說明書
In one embodiment, each bridge structure 73B may comprise a pair of lengthwise sidewalls that contact a pair of contact-level dielectric material portions (such as two portions of the contact-level dielectric layer 280 that are laterally spaced apart along the second horizontal direction (e.g., bit line direction) hd2 by a backside trench 79) and a pair of widthwise sidewalls that laterally extend along the second horizontal direction hd2 and adjoined to the pair of lengthwise sidewalls. The widthwise sidewalls of the at least one bridge structure 73B that contact a semiconductor backside trench fill structure 73 are parallel to the second horizontal direction hd2 that is perpendicular to the first horizontal direction (e.g., word line direction) hd1. In one embodiment, the at least one bridge structure 73B comprises a respective lengthwise sidewalls that are parallel to the first horizontal direction hd1 and adjoined to a respective pair of widthwise sidewalls that are parallel to the second horizontal direction hd2.
In one embodiment, the plurality of bridge structures 73B may be formed such that the plurality of bridge structures 73B comprises a periodic one-dimensional array of bridge structures 73B having a periodicity along the first horizontal direction hd1. The first patterned photoresist layer 371 can be subsequently removed, for example, by ashing.
