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Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same

專利號(hào)
US12225720B2
公開日期
2025-02-11
申請(qǐng)人
SANDISK TECHNOLOGIES LLC（US TX Addison）
發(fā)明人
Ryousuke Itou; Akihisa Sai; Kenzo Iizuka
IPC分類
H10B41/27; H01L21/3213; H01L21/768; H10B41/10; H10B43/10; H10B43/27; H01L23/522; H01L23/532
技術(shù)領(lǐng)域
backside,trench,dielectric,fill,layer,material,tier,73b,structures,bridge
地域： TX TX Addison

摘要

A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

說明書

According to an aspect of the present disclosure, the backside recesses (143, 243) can be formed by removing the sacrificial material layers (142, 242) selective to the insulating layers (132, 232), the sets of one or more bridge structures 73B, and the arrays of memory opening fill structures 58 while the sets of the one or more bridge structures 73B provide structural support at the level of the contact-level dielectric layer 280 and deformation of the first exemplary structure at the level of the contact-level dielectric layer 280 is suppressed or prevented.

Referring to FIGS. 23A and 23B, a backside blocking dielectric layer (not shown) may be optionally deposited in the backside recesses (143, 243) and the backside trenches 79 and over the contact-level dielectric layer 280. The backside blocking dielectric layer includes a dielectric material such as a dielectric metal oxide, silicon oxide, or a combination thereof. For example, the backside blocking dielectric layer may include aluminum oxide. The backside blocking dielectric layer may be formed by a conformal deposition process such as atomic layer deposition or chemical vapor deposition. The thickness of the backside blocking dielectric layer may be in a range from 1 nm to 20 nm, such as from 2 nm to 10 nm, although lesser and greater thicknesses may also be used.

權(quán)利要求

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