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Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same

專利號
US12225720B2
公開日期
2025-02-11
申請人
SANDISK TECHNOLOGIES LLC（US TX Addison）
發(fā)明人
Ryousuke Itou; Akihisa Sai; Kenzo Iizuka
IPC分類
H10B41/27; H01L21/3213; H01L21/768; H10B41/10; H10B43/10; H10B43/27; H01L23/522; H01L23/532
技術(shù)領(lǐng)域
backside,trench,dielectric,fill,layer,material,tier,73b,structures,bridge
地域： TX TX Addison

摘要

A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

說明書

Each contiguous combination of an insulating backside trench fill material portion 176 and at least one bridge structure 73B constitutes a backside trench fill structure (73B, 176). The insulating backside trench fill material portion 176 can contact widthwise sidewalls and a bottom surface of the at least one bridge structure 73B located in a same backside trench 79. Each backside trench fill structure (73B, 176) contacts a respective sidewall of each layer within a pair of alternating stacks of insulating layers (132, 232) and electrically conductive layers (146, 246). In one embodiment, a pair of lengthwise sidewalls of each insulating backside trench fill material portion 176 can contact a pair of lengthwise sidewalls of the backside trench 79 that laterally extends along the first horizontal direction hd1.

權(quán)利要求

1
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