Method for fabricating air bridge, air bridge structure, and superconducting quantum chip
地域：
Guangdong
摘要
This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.
說明書
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This application is a continuation of International Application No. PCT/CN2021/121480, entitled “METHOD FOR FABRICATING AIR BRIDGE, AIR BRIDGE STRUCTURE, AND SUPERCONDUCTING QUANTUM CHIP” and filed on Sep. 28, 2021, which claims priority to Chinese Patent Application No. 202011309305.2, entitled “METHOD FOR FABRICATING AIR BRIDGE, AIR BRIDGE STRUCTURE, AND SUPERCONDUCTING QUANTUM CHIP” filed on Nov. 20, 2020. The entire disclosures of the prior applications are hereby incorporated by reference in their entirety.
Embodiments of this disclosure relate to the field of circuit structures, including a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip.
An air bridge is a type of circuit structure, which is a way of implementing planar circuit bridging using a three-dimensional bridge structure and is applicable to various chips. Since the medium between the bridge and a circuit is air or vacuum, the bridge is referred to as an air bridge or a vacuum bridge.
權(quán)利要求
What is claimed is:1. A method for fabricating an air bridge, comprising:forming an air bridge brace structure on a substrate; forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure, the air bridge material layer with the one or more openings being formed based on a patterned photoresist layer with patterns corresponding to the one or more openings; and removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings, wherein the one or more openings includes at least one of an opening in an approach bridge portion of the air bridge or an opening in a pier portion of the air bridge. 2. The method according to claim 1 , wherein the forming the air bridge material layer comprises:forming a base air bridge without the one or more openings; forming the patterned photoresist layer over the base air bridge with the patterns that reveal regions of the base air bridge corresponding to the one or more openings; and etching the base air bridge based on the patterned photoresist layer to remove the regions of the base air bridge corresponding to the one or more openings. 3. The method according to claim 2 , wherein the one or more openings further include an opening in a bridge top portion for the air bridge. 4. The method according to claim 2 , wherein the patterned photoresist layer is a fourth patterned photoresist layer, and forming the base air bridge without the one or more openings further comprises:forming a third patterned photoresist layer over the air bridge brace structure and the substrate, the third patterned photoresist layer having a pattern that reveals a region for the base air bridge; depositing a material for the air bridge over the third patterned photoresist layer, the pattern allowing the material for the air bridge being deposited in the region for the base air bridge; and removing the third patterned photoresist layer to form the base air bridge. 5. The method according to claim 2 , wherein the patterned photoresist layer is a fourth patterned photoresist layer and the forming the patterned photoresist layer further comprises:coating a fourth photoresist layer on the base air bridge; and exposing and developing based on a mask to generate the patterns in the fourth photoresist layer to reveal the regions of the base air bridge corresponding to the one or more openings. 6. The method according to claim 1 , wherein the forming the air bridge material layer comprises:forming the patterned photoresist layer over the air bridge brace structure with the patterns that block regions on the air bridge brace structure under the one or more openings; depositing a material for the air bridge over the patterned photoresist layer, the patterns blocking the material from being deposited on the regions on the air bridge brace structure under the one or more openings; and removing the patterned photoresist layer to form the air bridge material layer with the one or more openings. 7. The method according to claim 6 , wherein the patterned photoresist layer is a third patterned photoresist layer and the forming the patterned photoresist layer further comprises:coating a third photoresist layer on the air bridge brace structure and the substrate; and exposing and developing the third photoresist layer based on a mask to generate the patterns in the third photoresist layer to block the regions of the air bridge brace structure under the one or more openings. 8. The method according to claim 1 , wherein the forming the air bridge brace structure on the substrate further comprises:coating a first photoresist layer on the substrate; coating a second photoresist layer over the first photoresist layer to form a stack of photoresist, the first photoresist layer being not subjected to a developing of the second photoresist layer; forming an opening in the stack of photoresist that reveals the substrate; depositing a material for the air bridge brace structure in the opening; and removing the stack of photoresist. 9. The method according to claim 8 , wherein the forming the opening in the stack of photoresist further comprises:exposing and developing the second photoresist layer based on a mask to generate an initial opening corresponding to the opening in the second photoresist layer; and etching the first photoresist layer based on the initial opening in the second photoresist layer. 10. The method according to claim 1 , wherein the forming the air bridge material layer comprises:forming the air bridge material layer as a continuous layer with multiple openings for a fully-enclosed air bridge. 11. The method according to claim 10 , wherein the multiple openings are disposed along a width direction of the air bridge. 12. The method according to claim 10 , wherein a distance between two neighboring openings is predefined. 13. The method according to claim 1 , wherein the forming the air bridge material layer further comprises:forming the air bridge material layer with an opening that extends in a length direction of the air bridge, the opening dividing the air bridge material layer into a first portion corresponding to a first air bridge, and a second portion corresponding to a second air bridge.
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