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Method for fabricating air bridge, air bridge structure, and superconducting quantum chip

專利號(hào)
US12225832B2
公開日期
2025-02-11
申請(qǐng)人
TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED; SUZHOU INSTITUTE OF NANO-TECH & NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES(CN Shenzhen CN Suzhou)
發(fā)明人
Wenlong Zhang; Sainan Huai; Yarui Zheng; Jiagui Feng; Kanglin Xiong; Sunan Ding
IPC分類
H10N60/83; H10N60/01; H10N60/81; H10N60/82; H10N69/00
技術(shù)領(lǐng)域
bridge,brace,air,patterned,opening,pier,etching,material,in,baking
地域: Guangdong

摘要

This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

說明書

At Step 501. The substrate is cleaned. The cleaning manner includes at least one of organic cleaning or inorganic cleaning. The organic cleaning refers to cleaning with acetone, isoacetone, or deionized water, and inorganic cleaning refers to cleaning with phosphoric acid, sulfuric acid, or a piranha solution. In some examples, the cleaning method includes at least one of ultrasonic cleaning or heating cleaning.

At Step 502. A first photoresist is spin-coated as a primer.

After spin-coating, first baking is performed on the first photoresist. The temperature of the first baking is the soft baking temperature of the first photoresist. The first photoresist is a polymethyl methacrylate (PMMA) photoresist.

At Step 503. A second photoresist is spin-coated on the first photoresist layer as a pattern definition layer.

The first photoresist does not react with a developer of the second photoresist. In some examples, the second photoresist layer has an opposite light sensitive property from the first photoresist layer. In an example, the first photoresist layer is positive photoresist, and the second photoresist is negative photoresist.

Second baking is performed on the second photoresist. The temperature of the second baking is the soft baking temperature of the second photoresist.

At Step 504. Exposure patterning is performed on the second photoresist.

The exposure process includes ultraviolet exposure or laser direct writing, and the baking temperature is a pre-baking temperature of the second photoresist.

At Step 505. A structure used for depositing and lifting off a bridge brace after development and fixation is obtained.

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