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Method for fabricating air bridge, air bridge structure, and superconducting quantum chip

專(zhuān)利號(hào)
US12225832B2
公開(kāi)日期
2025-02-11
申請(qǐng)人
TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED; SUZHOU INSTITUTE OF NANO-TECH & NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES(CN Shenzhen CN Suzhou)
發(fā)明人
Wenlong Zhang; Sainan Huai; Yarui Zheng; Jiagui Feng; Kanglin Xiong; Sunan Ding
IPC分類(lèi)
H10N60/83; H10N60/01; H10N60/81; H10N60/82; H10N69/00
技術(shù)領(lǐng)域
bridge,brace,air,patterned,opening,pier,etching,material,in,baking
地域: Guangdong

摘要

This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

說(shuō)明書(shū)

Illustratively, referring to FIG. 7, the process of fabricating an air bridge corresponding to the method A includes the following steps:

At Step 700. A bridge brace material is deposited. The bridge brace material is deposited in the manner shown in FIG. 5.

At Step 701. A patterned photoresist is coated. The baking temperature is a soft baking temperature of the patterned photoresist.

At Step 702. Exposure patterning is performed. The exposure process includes ultraviolet exposure or laser direct writing. The baking temperature is a pre-baking temperature of the patterned photoresist. Patterned patterns in the patterning process include a separated air bridge pattern and a fully-enclosed air bridge pattern, where the fully-enclosed air bridge is an air bridge having an opening pattern at the pier portion and/or the approach bridge portion.

At Step 703. A structure of a bridge having an opening is obtained after development and fixation.

At Step 704. An oxide layer on a substrate is etched and removed.

At Step 705. A bridge material is deposited. The method for depositing the bridge material includes deposition methods with good directionality control such as electron beam deposition and molecular beam epitaxy.

At Step 706. Glue layers are released (removed). The temperature of lift-off ranges from 20° C. to 100° C., and lift-off methods include a soaking method or an ultrasonic method.

權(quán)利要求

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