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Method for fabricating air bridge, air bridge structure, and superconducting quantum chip

專利號
US12225832B2
公開日期
2025-02-11
申請人
TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED; SUZHOU INSTITUTE OF NANO-TECH & NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES(CN Shenzhen CN Suzhou)
發(fā)明人
Wenlong Zhang; Sainan Huai; Yarui Zheng; Jiagui Feng; Kanglin Xiong; Sunan Ding
IPC分類
H10N60/83; H10N60/01; H10N60/81; H10N60/82; H10N69/00
技術(shù)領(lǐng)域
bridge,brace,air,patterned,opening,pier,etching,material,in,baking
地域: Guangdong

摘要

This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

說明書

That is, when the opening is located at the approach bridge portion, the patterned region includes a region corresponding to the pier portion and the bridge top portion; when the opening is located at the approach bridge portion and the pier portion, the patterned region includes a region corresponding to the bridge top portion; when the opening is located at the bridge top portion, the patterned region includes a region corresponding to the approach bridge portion and the pier portion; when the opening is located at the bridge top portion and the approach bridge portion, the patterned region includes a region corresponding to the pier portion, and the mask is covered on the patterned region; or when the opening is located at the bridge top portion, the approach bridge portion, and the pier portion, the mask is covered on a connection portion between any two portions, or no mask is covered on this region. In some embodiments, the air bridge is cut off in a manner of not covering the mask every predetermined distance, so as to directly obtain a plurality of separated air bridges.

At Step 909. Opening treatment on the basic air bridge is performed based on the mask, to obtain the air bridge having the opening.

In some embodiments, light is applied to the photoresist used for fabricating an opening, the photoresist used for fabricating an opening is exposed, and the exposed photoresist used for fabricating an opening is developed, to obtain an opening pattern of the air bridge. Etching is performed on the basic air bridge based on the opening pattern, and the photoresist used for fabricating an opening on a peripheral side of the air bridge is released. An etching material is released from the opening, and the bridge brace material is etched, to obtain the air bridge having the opening.

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