The disclosure provides a cell structure of a silicon carbide MOSFET device, including: a first conductivity type drift region, which is located above a first conductivity type substrate; a main trench, which is provided downwardly in a surface of the drift region; a Schottky metal being provided on surfaces of a bottom and sidewalls of the main trench; a second conductivity type well region, which is located in the surface of the drift region and provided around the main trench; a first conductivity type source region, which is located in a surface of the well region, the source region being located at a side, close to the main trench, of the well region but being not in contact with the main trench; a gate structure, which is located at sides, close to the main trench, of the source region, the well region, and the drift region, the gate structure including a gate and a gate insulating layer for isolating the gate from the source region, the well region, and the drift region; a source metal, which is located above the source region; and a drain metal, which is located below the substrate, the source metal being connected to the Schottky metal via a source compacted block metal above the source metal, at least the gate in the gate structure being isolated from the source metal, the Schottky metal, and the source compacted block metal.

The disclosure further discloses a silicon carbide MOSFET device, including a cell structure of the silicon carbide MOSFET device described above.

Other features and advantages of the disclosure will be set forth in the following description, and will partly become apparent from the description or be understood through implementation of the disclosure. The objective and other advantages of the disclosure can be achieved or obtained through structures specifically pointed out in the description, claims, and the accompanying drawings.