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Display panel and electronic device including the same

專利號(hào)
US12256621B2
公開日期
2025-03-18
申請(qǐng)人
SAMSUNG ELECTRONICS CO., LTD.(KR Gyeonggi-Do)
發(fā)明人
Tae Gon Kim; Shin Ae Jun; Deukseok Chung; Nayoun Won; Sung Hun Lee; Byoung Ki Choi
IPC分類
H10K59/38; C09K11/56; C09K11/88; H10K59/12; H10K71/00; B82Y20/00; B82Y40/00
技術(shù)領(lǐng)域
equal,about,or,than,light,nm,less,greater,emitting,may
地域: Suwon-si

摘要

A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A≤about 0.6 A and B are as defined.

說明書

preparing first semiconductor nanocrystals (or core particles including the same) including indium (In) and phosphorus (P) and optionally zinc; and in the presence of the first semiconductor nanocrystals (or core particles including the same) and an organic ligand, reacting a zinc precursor; and at least one of a selenium precursor and a sulfur precursor simultaneously or sequentially (e.g., in an organic solvent) to form a second semiconductor nanocrystal (or a shell including the same, hereinafter also referred to as a second semiconductor nanocrystal); wherein during the formation of the second semiconductor nanocrystals, the selenium precursor and the sulfur precursor are injected so that at least a portion of the surface of the final luminescent nanostructures includes all of sulfur, selenium, and zinc. In an embodiment, during the formation of the second semiconductor nanocrystals, the selenium precursor and the sulfur precursor may be injected so that a portion adjacent to the core may include both selenium and sulfur.

In the method, the selenium precursor and the sulfur precursor may be injected so that, in the final luminescent nanostructures, the thickness of the second semiconductor nanocrystal may be about 5 ML or less (or less than or equal to about 2 nm, or less than or equal to about 1.5 nm) and/or the mole ratio of sulfur to selenium may be greater than about 2.

權(quán)利要求

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